NSV1C201LT1G

Bipolar Transistors - BJT 100 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor

SKU: NSV1C201LT1G

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R 21.27

R 13.20

R 8.56

R 6.54

R 5.90

R 4.54

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Bipolar Transistors - BJT 100 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor

Products specifications

Emitter- Base Voltage VEBO	7 V
Collector- Base Voltage VCBO	140 V
Transistor Polarity	NPN
Configuration	Single
Technology	Si
Series	NSS1C201L
Maximum DC Collector Current	3 A
Collector- Emitter Voltage VCEO Max	100 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	30 mV
Gain Bandwidth Product fT	110 MHz

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Products specifications

Emitter- Base Voltage VEBO	7 V
Collector- Base Voltage VCBO	140 V
Transistor Polarity	NPN
Configuration	Single
Technology	Si
Series	NSS1C201L
Maximum DC Collector Current	3 A
Collector- Emitter Voltage VCEO Max	100 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	30 mV
Gain Bandwidth Product fT	110 MHz