NSV1C201MZ4T1G

Bipolar Transistors - BJT 2.0 A, 100 V Low VCE(sat) NPN Bipolar Transistor
Lead Time: 70 Days

SKU: NSV1C201MZ4T1G

Availability: 369 in stock

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R 23.35

R 14.48

R 9.43

R 7.25

R 6.36

R 5.61

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Bipolar Transistors - BJT 2.0 A, 100 V Low VCE(sat) NPN Bipolar Transistor
Lead Time: 182 Days

Products specifications

Minimum Operating Temperature	- 55 C
Series	NSS1C201MZ4
Maximum Operating Temperature	+ 150 C
Configuration	Single
Emitter- Base Voltage VEBO	7 V
Gain Bandwidth Product fT	100 MHz
Collector-Emitter Saturation Voltage	0.18 V
Transistor Polarity	NPN
Maximum DC Collector Current	2 A
Collector- Emitter Voltage VCEO Max	100 V
Collector- Base Voltage VCBO	140 V

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Products specifications

Minimum Operating Temperature	- 55 C
Series	NSS1C201MZ4
Maximum Operating Temperature	+ 150 C
Configuration	Single
Emitter- Base Voltage VEBO	7 V
Gain Bandwidth Product fT	100 MHz
Collector-Emitter Saturation Voltage	0.18 V
Transistor Polarity	NPN
Maximum DC Collector Current	2 A
Collector- Emitter Voltage VCEO Max	100 V
Collector- Base Voltage VCBO	140 V