NSV1C301ET4G

Bipolar Transistors - BJT 3 A, 100 V Low VCE(sat) NPN Transistor
Lead Time: 98 Days

SKU: NSV1C301ET4G

Availability: 3475 in stock

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R 31.01

R 19.43

R 12.82

R 9.94

R 9.02

R 8.02

R 7.07

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Bipolar Transistors - BJT 3 A, 100 V Low VCE(sat) NPN Transistor
Lead Time: 182 Days

Products specifications

Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	140 V
Gain Bandwidth Product fT	120 MHz
Maximum DC Collector Current	6 A
Configuration	Single
Minimum Operating Temperature	- 65 C
Collector-Emitter Saturation Voltage	0.115 V
Emitter- Base Voltage VEBO	6 V
Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	100 V

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Products specifications

Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	140 V
Gain Bandwidth Product fT	120 MHz
Maximum DC Collector Current	6 A
Configuration	Single
Minimum Operating Temperature	- 65 C
Collector-Emitter Saturation Voltage	0.115 V
Emitter- Base Voltage VEBO	6 V
Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	100 V