Bipolar Transistors - BJT 3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor AEC-Q101
Lead Time: 182 Days
Products specifications
| Gain Bandwidth Product fT | 150 MHz |
| Technology | Si |
| Collector-Emitter Saturation Voltage | 0.15 V |
| Transistor Polarity | NPN |
| Collector- Base Voltage VCBO | 40 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Emitter- Base Voltage VEBO | 6 V |
| Series | NSS40501UW3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |