NSV60200LT1G

Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, -60 V, 2.0 A
Lead Time: 70 Days

SKU: NSV60200LT1G

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R 16.40

R 10.07

R 6.46

R 4.18

R 3.59

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Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, -60 V, 2.0 A

Products specifications

Maximum DC Collector Current	- 4 A
Collector-Emitter Saturation Voltage	170 mV
Gain Bandwidth Product fT	100 MHz
Collector- Emitter Voltage VCEO Max	- 60 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	PNP
Configuration	Single
Emitter- Base Voltage VEBO	- 7 V
Series	NSS60200LT1G
Collector- Base Voltage VCBO	- 80 V

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Products specifications

Maximum DC Collector Current	- 4 A
Collector-Emitter Saturation Voltage	170 mV
Gain Bandwidth Product fT	100 MHz
Collector- Emitter Voltage VCEO Max	- 60 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	PNP
Configuration	Single
Emitter- Base Voltage VEBO	- 7 V
Series	NSS60200LT1G
Collector- Base Voltage VCBO	- 80 V