IGBT Modules PIM 1200V 160A SPLIT TNP IGBT
Products specifications
| Product | IGBT Silicon Modules |
| Technology | Si |
| Configuration | Split-T |
| Continuous Collector Current at 25 C | 100 A, 160 A |
| Packaging | Tray |
| Pd - Power Dissipation | 500 W |
| Collector-Emitter Saturation Voltage | 1.47 V, 2.15 V |
| Collector- Emitter Voltage VCEO Max | 600 V, 1200 V |
| Maximum Operating Temperature | + 125 C |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 300 nA, 500 nA |