IGBT Modules PIM 1200V 40A DU BST SiC DIODE
Lead Time: 0 Days
Products specifications
| Minimum Operating Temperature | - 40 C |
| Configuration | Dual |
| Maximum Operating Temperature | + 125 C |
| Collector-Emitter Saturation Voltage | 2.2 V |
| Pd - Power Dissipation | 103 W |
| Continuous Collector Current at 25 C | 40 A |
| Technology | SiC |
| Product | IGBT Silicon Carbide Modules |
| Packaging | Tray |
| Gate-Emitter Leakage Current | 200 nA |
| Collector- Emitter Voltage VCEO Max | 1200 V |