NXH80T120L2Q0S1G

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IGBT Modules PIM 1200V 80A TNPC CUST T-TYPE MODULE

SKU: NXH80T120L2Q0S1G

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IGBT Modules PIM 1200V 80A TNPC CUST T-TYPE MODULE

Products specifications

Continuous Collector Current at 25 C	49 A, 67 A
Packaging	Tray
Collector-Emitter Saturation Voltage	1.4 V, 2.05 V
Maximum Operating Temperature	+ 150 C
Product	IGBT Silicon Modules
Technology	Si
Configuration	T-Type
Collector- Emitter Voltage VCEO Max	600 V, 1200 V
Minimum Operating Temperature	- 40 C
Gate-Emitter Leakage Current	200 nA, 300 nA
Pd - Power Dissipation	158 W

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Products specifications

Continuous Collector Current at 25 C	49 A, 67 A
Packaging	Tray
Collector-Emitter Saturation Voltage	1.4 V, 2.05 V
Maximum Operating Temperature	+ 150 C
Product	IGBT Silicon Modules
Technology	Si
Configuration	T-Type
Collector- Emitter Voltage VCEO Max	600 V, 1200 V
Minimum Operating Temperature	- 40 C
Gate-Emitter Leakage Current	200 nA, 300 nA
Pd - Power Dissipation	158 W