SBC856ALT1G

Bipolar Transistors - BJT SS GP XSTR PNP 65V

SKU: SBC856ALT1G

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R 8.20

R 4.97

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Bipolar Transistors - BJT SS GP XSTR PNP 65V

Products specifications

Collector-Emitter Saturation Voltage	- 0.3 V
Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 65 V
Emitter- Base Voltage VEBO	- 5 V
Transistor Polarity	PNP
Series	SBC856ALT1G
Collector- Base Voltage VCBO	- 80 V

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Products specifications

Collector-Emitter Saturation Voltage	- 0.3 V
Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 65 V
Emitter- Base Voltage VEBO	- 5 V
Transistor Polarity	PNP
Series	SBC856ALT1G
Collector- Base Voltage VCBO	- 80 V