SMBT3946DW1T1G

Bipolar Transistors - BJT SS GP XSTR DUAL 40V

SKU: SMBT3946DW1T1G

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Bipolar Transistors - BJT SS GP XSTR DUAL 40V

Products specifications

Technology	Si
Series	MBT3946DW1T1
Collector- Base Voltage VCBO	- 40 V, 60 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	- 250 mV, 200 mV
Transistor Polarity	NPN, PNP
Emitter- Base Voltage VEBO	- 5 V, 6 V
Maximum DC Collector Current	- 200 mA, 200 mA
Collector- Emitter Voltage VCEO Max	40 V
Gain Bandwidth Product fT	250 MHz, 300 MHz
Configuration	Dual

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Products specifications

Technology	Si
Series	MBT3946DW1T1
Collector- Base Voltage VCBO	- 40 V, 60 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	- 250 mV, 200 mV
Transistor Polarity	NPN, PNP
Emitter- Base Voltage VEBO	- 5 V, 6 V
Maximum DC Collector Current	- 200 mA, 200 mA
Collector- Emitter Voltage VCEO Max	40 V
Gain Bandwidth Product fT	250 MHz, 300 MHz
Configuration	Dual