IGBT Modules 1200V 100A SIC IGBT CoPak
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Technology | SiC |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Packaging | Bulk |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Product | IGBT Silicon Carbide Modules |
| Configuration | IGBT-Inverter |
| Collector- Emitter Voltage VCEO Max | 1200 V |