DU28120T

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RF MOSFET Transistors 2.175MHz 120W MOSFET

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RF MOSFET Transistors 2.175MHz 120W MOSFET

Products specifications

Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 200 C
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	120 W
Id - Continuous Drain Current	24 A
Gain	13 dB
Technology	Si

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Products specifications

Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 200 C
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	120 W
Id - Continuous Drain Current	24 A
Gain	13 dB
Technology	Si