MAGX-000040-0050TP

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RF JFET Transistors DC-4 GHz Gain 13.5dB GaN SiC

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RF JFET Transistors DC-4 GHz Gain 13.5dB GaN SiC

Products specifications

Output Power	5 W
Vds - Drain-Source Breakdown Voltage	50 V
Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 95 C
Transistor Polarity	N-Channel
Gain	13.5 dB
Id - Continuous Drain Current	0.3 A
Pd - Power Dissipation	12 W
Transistor Type	HEMT
Packaging	Reel
Technology	GaN SiC

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Products specifications

Output Power	5 W
Vds - Drain-Source Breakdown Voltage	50 V
Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 95 C
Transistor Polarity	N-Channel
Gain	13.5 dB
Id - Continuous Drain Current	0.3 A
Pd - Power Dissipation	12 W
Transistor Type	HEMT
Packaging	Reel
Technology	GaN SiC