GaN FETs M/A-COM Technology Solutions
Lead Time: 0 Days
Products specifications
|
Minimum Operating Temperature
|
- 40 C |
|
Vgs - Gate-Source Breakdown Voltage
|
- 10 V to 3 V |
|
Vds - Drain-Source Breakdown Voltage
|
28 V |
|
Technology
|
GaN Si |
|
Transistor Type
|
HEMT |
|
Output Power
|
4 W |
|
Gain
|
9 dB |
|
Id - Continuous Drain Current
|
50 mA |
|
Maximum Operating Temperature
|
+ 85 C |
|
Transistor Polarity
|
N-Channel |
|
Product Type
|
RF JFET Transistors |