MAGX-011086

GaN FETs M/A-COM Technology Solutions
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SKU: MAGX-011086

Availability: 117 in stock

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R 702.32

R 498.54

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GaN FETs M/A-COM Technology Solutions
Lead Time: 0 Days

Products specifications

Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 10 V to 3 V
Vds - Drain-Source Breakdown Voltage	28 V
Technology	GaN Si
Transistor Type	HEMT
Output Power	4 W
Gain	9 dB
Id - Continuous Drain Current	50 mA
Maximum Operating Temperature	+ 85 C
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors

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Products specifications

Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 10 V to 3 V
Vds - Drain-Source Breakdown Voltage	28 V
Technology	GaN Si
Transistor Type	HEMT
Output Power	4 W
Gain	9 dB
Id - Continuous Drain Current	50 mA
Maximum Operating Temperature	+ 85 C
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors