RF Bipolar Transistors 960-1215MHz 350W Gain: 9.4dB min
Products specifications
| Technology | Si |
| Packaging | Tray |
| Continuous Collector Current | 32.5 A |
| Configuration | Single |
| Transistor Polarity | NPN |
| Maximum Operating Temperature | + 200 C |
| Product Type | RF Bipolar Transistors |
| Emitter- Base Voltage VEBO | 3 V |
| Transistor Type | Bipolar Power |
| Collector- Emitter Voltage VCEO Max | 65 V |