GaN FETs DC-4.0GHz P1dB 43dBm Gain 13dB GaN
Lead Time: 0 Days
Products specifications
|
Transistor Type
|
HEMT |
|
Product Type
|
RF JFET Transistors |
|
Gain
|
13 dB |
|
Packaging
|
Tray |
|
Vgs - Gate-Source Breakdown Voltage
|
3 V |
|
Id - Continuous Drain Current
|
4 mA |
|
Maximum Operating Temperature
|
+ 200 C |
|
Technology
|
GaN Si |
|
Pd - Power Dissipation
|
44 W |
|
Mounting Style
|
Screw Mount |
|
Transistor Polarity
|
N-Channel |
|
Vds - Drain-Source Breakdown Voltage
|
100 V |