RF Amplifier DC-2.0GHz 100W Gain 20dB GaN HEMT
Lead Time: 0 Days
Products specifications
| Vgs - Gate-Source Breakdown Voltage | 3 V |
| Transistor Polarity | N-Channel |
| Mounting Style | Screw Mount |
| Vds - Drain-Source Breakdown Voltage | 160 V |
| Transistor Type | HEMT |
| Packaging | Tray |
| Gain | 21 dB |
| Minimum Operating Temperature | - 40 C |
| Product Type | RF JFET Transistors |
| Technology | GaN Si |
| Maximum Operating Temperature | + 85 C |
| Id - Continuous Drain Current | 24 mA |
| Output Power | 100 W |