NPTB00004A

GaN FETs DC-6.0GHz 5W Gain 16dB GaN HEMT

SKU: NPTB00004A

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R 566.72

R 458.04

R 431.90

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GaN FETs DC-6.0GHz 5W Gain 16dB GaN HEMT

Products specifications

Packaging	Tray
Gain	16 dB
Id - Continuous Drain Current	1.4 A
Transistor Type	HEMT
Product Type	RF JFET Transistors
Technology	GaN Si
Vds - Drain-Source Breakdown Voltage	100 V
Maximum Operating Temperature	+ 200 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	11.6 W

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Products specifications

Packaging	Tray
Gain	16 dB
Id - Continuous Drain Current	1.4 A
Transistor Type	HEMT
Product Type	RF JFET Transistors
Technology	GaN Si
Vds - Drain-Source Breakdown Voltage	100 V
Maximum Operating Temperature	+ 200 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	11.6 W