RF Bipolar Transistors Transistor,110W,2.7-2.9GHz,100us,10%
Products specifications
| Configuration | Single |
| Continuous Collector Current | 8 A |
| Maximum Operating Temperature | + 200 C |
| Output Power | 110 W |
| Technology | Si |
| Transistor Type | Bipolar |
| Emitter- Base Voltage VEBO | 3 V |
| Transistor Polarity | NPN |
| Mounting Style | Flange Mount |
| Product Type | RF Bipolar Transistors |
| Collector- Emitter Voltage VCEO Max | 63 V |