SiC MOSFETs ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
Lead Time: 0 Days
Products specifications
|
Configuration
|
Single |
|
Vds - Drain-Source Breakdown Voltage
|
1.2 kV |
|
Vgs - Gate-Source Voltage
|
25 V, - 5 V |
|
Number of Channels
|
1 Channel |
|
Maximum Operating Temperature
|
+ 150 C |
|
Rds On - Drain-Source Resistance
|
80 mOhms |
|
Minimum Operating Temperature
|
- 55 C |
|
Vgs th - Gate-Source Threshold Voltage
|
3.1 V |
|
Transistor Polarity
|
N-Channel |
|
Technology
|
SiC |
|
Channel Mode
|
Enhancement |
|
Pd - Power Dissipation
|
208 W |
|
Id - Continuous Drain Current
|
31.6 A |
|
Mounting Style
|
Through Hole |
|
Packaging
|
Tube |
|
Qg - Gate Charge
|
94 nC |