SiC MOSFETs ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
Lead Time: 0 Days
Products specifications
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Vgs - Gate-Source Voltage | 25 V, - 5 V |
| Number of Channels | 1 Channel |
| Maximum Operating Temperature | + 150 C |
| Rds On - Drain-Source Resistance | 80 mOhms |
| Minimum Operating Temperature | - 55 C |
| Vgs th - Gate-Source Threshold Voltage | 3.1 V |
| Transistor Polarity | N-Channel |
| Technology | SiC |
| Channel Mode | Enhancement |
| Pd - Power Dissipation | 208 W |
| Id - Continuous Drain Current | 31.6 A |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Qg - Gate Charge | 94 nC |