CG2H80030D-GP4

GaN FETs GaN HEMT Die DC-8.0GHz, 30 Watt
Lead Time: 182 Days

SKU: CG2H80030D-GP4

Availability: 40 in stock

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Quantity

10+

Price

R 3,728.94

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GaN FETs GaN HEMT Die DC-8.0GHz, 30 Watt
Lead Time: 182 Days

Products specifications

Technology	GaN
Packaging	Gel Pack
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Polarity	N-Channel
Gain	16.5 dB
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Product Type	RF JFET Transistors
Id - Continuous Drain Current	3 A
Minimum Operating Temperature	-
Output Power	30 W
Maximum Operating Temperature	+ 225 C

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Products specifications

Technology	GaN
Packaging	Gel Pack
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Polarity	N-Channel
Gain	16.5 dB
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Product Type	RF JFET Transistors
Id - Continuous Drain Current	3 A
Minimum Operating Temperature	-
Output Power	30 W
Maximum Operating Temperature	+ 225 C