CGH27030F

GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt

SKU: CGH27030F

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Quantity

100+

Price

R 3,499.28

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GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt

Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Maximum Operating Temperature	+ 150 C
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Id - Continuous Drain Current	7 A
Maximum Drain Gate Voltage	28 V
Output Power	30 W
Pd - Power Dissipation	14 W
Technology	GaN
Mounting Style	Screw Mount
Gain	15 dB
Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V

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Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Maximum Operating Temperature	+ 150 C
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Id - Continuous Drain Current	7 A
Maximum Drain Gate Voltage	28 V
Output Power	30 W
Pd - Power Dissipation	14 W
Technology	GaN
Mounting Style	Screw Mount
Gain	15 dB
Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V