CGH27030S

GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Lead Time: 182 Days

SKU: CGH27030S

Availability: 184 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

250+

Price

R 2,362.50

R 1,719.65

Free shipping

GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Lead Time: 182 Days

Products specifications

Output Power	30 W
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	84 V
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Technology	GaN
Maximum Operating Temperature	+ 150 C
Maximum Drain Gate Voltage	28 V
Id - Continuous Drain Current	7 A
Transistor Polarity	N-Channel
Transistor Type	HEMT
Pd - Power Dissipation	21.6 W
Gain	18 dB
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors

Your name *

Your email *

Enquiry *

Products specifications

Output Power	30 W
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	84 V
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Technology	GaN
Maximum Operating Temperature	+ 150 C
Maximum Drain Gate Voltage	28 V
Id - Continuous Drain Current	7 A
Transistor Polarity	N-Channel
Transistor Type	HEMT
Pd - Power Dissipation	21.6 W
Gain	18 dB
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors