GaN FETs GaN HEMT DC-2.5GHz, 120 Watt
Products specifications
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 12 A |
| Transistor Type | HEMT |
| Technology | GaN |
| Mounting Style | Screw Mount |
| Product Type | RF JFET Transistors |
| Output Power | 120 W |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | - |
| Gain | 19 dB |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Maximum Drain Gate Voltage | - |
| Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |