CGH55030F2

RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
Lead Time: 0 Days

SKU: CGH55030F2

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RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
Lead Time: 0 Days

Products specifications

Packaging	Tray
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Type	HEMT
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 150 C
Mounting Style	Screw Mount
Technology	GaN
Output Power	25 W
Id - Continuous Drain Current	3 A
Gain	12 dB
Maximum Drain Gate Voltage	-
Pd - Power Dissipation	-
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V

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Products specifications

Packaging	Tray
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Type	HEMT
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 150 C
Mounting Style	Screw Mount
Technology	GaN
Output Power	25 W
Id - Continuous Drain Current	3 A
Gain	12 dB
Maximum Drain Gate Voltage	-
Pd - Power Dissipation	-
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V