CGHV14800F

GaN FETs GaN HEMT 1.2-1.4GHz, 800 Watt

SKU: CGHV14800F

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Quantity

10+

Price

R 40,100.24

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GaN FETs GaN HEMT 1.2-1.4GHz, 800 Watt

Products specifications

Vds - Drain-Source Breakdown Voltage	150 V
Product Type	RF JFET Transistors
Gain	14 dB
Mounting Style	Screw Mount
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Minimum Operating Temperature	- 40 C
Pd - Power Dissipation	-
Transistor Polarity	N-Channel
Technology	GaN
Output Power	800 W
Id - Continuous Drain Current	24 A
Maximum Operating Temperature	+ 100 C
Packaging	Tray
Maximum Drain Gate Voltage	-

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Products specifications

Vds - Drain-Source Breakdown Voltage	150 V
Product Type	RF JFET Transistors
Gain	14 dB
Mounting Style	Screw Mount
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Minimum Operating Temperature	- 40 C
Pd - Power Dissipation	-
Transistor Polarity	N-Channel
Technology	GaN
Output Power	800 W
Id - Continuous Drain Current	24 A
Maximum Operating Temperature	+ 100 C
Packaging	Tray
Maximum Drain Gate Voltage	-