CGHV35060MP

GaN FETs GaN HEMT 2.7-3.1GHz, 60 Watt

SKU: CGHV35060MP

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Quantity

250+

Price

R 4,123.68

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GaN FETs GaN HEMT 2.7-3.1GHz, 60 Watt

Products specifications

Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	10.4 A
Maximum Drain Gate Voltage	50 V
Transistor Type	HEMT
Pd - Power Dissipation	52 W
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Gain	14.5 dB
Transistor Polarity	N-Channel
Packaging	Reel
Maximum Operating Temperature	+ 107 C
Product Type	RF JFET Transistors
Output Power	75 W
Technology	GaN
Vds - Drain-Source Breakdown Voltage	150 V

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Products specifications

Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	10.4 A
Maximum Drain Gate Voltage	50 V
Transistor Type	HEMT
Pd - Power Dissipation	52 W
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Gain	14.5 dB
Transistor Polarity	N-Channel
Packaging	Reel
Maximum Operating Temperature	+ 107 C
Product Type	RF JFET Transistors
Output Power	75 W
Technology	GaN
Vds - Drain-Source Breakdown Voltage	150 V