CGHV40030F

GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Lead Time: 182 Days

SKU: CGHV40030F

Availability: 79 in stock

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GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Lead Time: 182 Days

Products specifications

Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	100 V
Mounting Style	Screw Mount
Output Power	30 W
Gain	16 dB
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Technology	GaN
Maximum Drain Gate Voltage	-
Packaging	Tray
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	2.6 V
Pd - Power Dissipation	-
Id - Continuous Drain Current	4.2 A
Minimum Operating Temperature	- 40 C

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Products specifications

Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	100 V
Mounting Style	Screw Mount
Output Power	30 W
Gain	16 dB
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Technology	GaN
Maximum Drain Gate Voltage	-
Packaging	Tray
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	2.6 V
Pd - Power Dissipation	-
Id - Continuous Drain Current	4.2 A
Minimum Operating Temperature	- 40 C