GaN FETs GaN HEMT
Lead Time: 182 Days
Products specifications
| Output Power | 180 W |
| Product Type | RF JFET Transistors |
| Technology | GaN |
| Id - Continuous Drain Current | 18 A |
| Packaging | Tray |
| Minimum Operating Temperature | - 40 C |
| Mounting Style | Screw Mount |
| Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
| Transistor Polarity | N-Channel |
| Gain | 20.3 dB |
| Pd - Power Dissipation | 150 W |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | HEMT |
| Maximum Drain Gate Voltage | - |
| Vds - Drain-Source Breakdown Voltage | 125 V |