CGHV40320D-GP4

GaN FETs GaN HEMT Die DC-4.0GHz, 320 Watt
Lead Time: 182 Days

SKU: CGHV40320D-GP4

Availability: 30 in stock

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Quantity

10+

Price

R 18,793.38

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GaN FETs GaN HEMT Die DC-4.0GHz, 320 Watt
Lead Time: 182 Days

Products specifications

Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Vgs - Gate-Source Breakdown Voltage	-
Product Type	RF JFET Transistors
Transistor Type	HEMT
Id - Continuous Drain Current	-
Minimum Operating Temperature	-
Packaging	Gel Pack
Vds - Drain-Source Breakdown Voltage	50 V
Technology	GaN
Transistor Polarity	N-Channel
Gain	-
Maximum Operating Temperature	-
Output Power	320 W

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Products specifications

Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Vgs - Gate-Source Breakdown Voltage	-
Product Type	RF JFET Transistors
Transistor Type	HEMT
Id - Continuous Drain Current	-
Minimum Operating Temperature	-
Packaging	Gel Pack
Vds - Drain-Source Breakdown Voltage	50 V
Technology	GaN
Transistor Polarity	N-Channel
Gain	-
Maximum Operating Temperature	-
Output Power	320 W