GaN FETs GaN HEMT 5.2-5.9GHz, 350 Watt
Lead Time: 182 Days
Products specifications
|
Minimum Operating Temperature
|
- 40 C |
|
Gain
|
11 dB |
|
Vds - Drain-Source Breakdown Voltage
|
125 V |
|
Technology
|
GaN |
|
Vgs - Gate-Source Breakdown Voltage
|
- 10 V, 2 V |
|
Output Power
|
450 W |
|
Packaging
|
Tray |
|
Transistor Type
|
HEMT |
|
Product Type
|
RF JFET Transistors |
|
Maximum Operating Temperature
|
+ 85 C |