CGHV96050F1

GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt

SKU: CGHV96050F1-AMP

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Quantity

50+

Price

R 14,082.48

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GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt

Products specifications

Output Power	80 W
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	100 V
Technology	GaN
Transistor Type	HEMT
Maximum Drain Gate Voltage	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Mounting Style	Screw Mount
Product Type	RF JFET Transistors
Gain	16 dB
Packaging	Tray
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Id - Continuous Drain Current	6 A
Pd - Power Dissipation	-

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Products specifications

Output Power	80 W
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	100 V
Technology	GaN
Transistor Type	HEMT
Maximum Drain Gate Voltage	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Mounting Style	Screw Mount
Product Type	RF JFET Transistors
Gain	16 dB
Packaging	Tray
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Id - Continuous Drain Current	6 A
Pd - Power Dissipation	-