PTAC210802FC-V1-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Rds On - Drain-Source Resistance	600 mOhms
Technology	Si
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 225 C
Gain	17.5 dB
Output Power	80 W

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Products specifications

Rds On - Drain-Source Resistance	600 mOhms
Technology	Si
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 225 C
Gain	17.5 dB
Output Power	80 W