PTRA093302FC-V1-R2

Call for pricing

RF MOSFET Transistors Power Amplifier

Availability: Out of stock

Qty:

Free shipping

RF MOSFET Transistors Power Amplifier

Products specifications

Maximum Operating Temperature	+ 225 C
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	105 V
Technology	Si
Rds On - Drain-Source Resistance	400 mOhms
Transistor Polarity	Dual N-Channel
Gain	17.25 dB
Output Power	330 W
Product Type	RF MOSFET Transistors

Your name *

Your email *

Enquiry *

Products specifications

Maximum Operating Temperature	+ 225 C
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	105 V
Technology	Si
Rds On - Drain-Source Resistance	400 mOhms
Transistor Polarity	Dual N-Channel
Gain	17.25 dB
Output Power	330 W
Product Type	RF MOSFET Transistors