RF MOSFET Transistors Power Amplifier
Products specifications
| Vds - Drain-Source Breakdown Voltage | 110 V |
| Technology | Si |
| Packaging | Reel |
| Rds On - Drain-Source Resistance | 70 mOhms |
| Output Power | 208 W |
| Transistor Polarity | Dual N-Channel |
| Maximum Operating Temperature | + 225 C |
| Gain | 18.5 dB |
| Product Type | RF MOSFET Transistors |