PTVA102001EA-V1-R2

RF MOSFET Transistors RF LDMOS FET

SKU: PTVA102001EA-V1-R2

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Quantity

250+

Price

R 4,201.34

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Output Power	200 W
Gain	18.5 dB
Vds - Drain-Source Breakdown Voltage	105 V
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Technology	Si
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	340 mOhms
Packaging	Reel

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Products specifications

Output Power	200 W
Gain	18.5 dB
Vds - Drain-Source Breakdown Voltage	105 V
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Technology	Si
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	340 mOhms
Packaging	Reel