RF MOSFET Transistors RF LDMOS FET
Products specifications
| Rds On - Drain-Source Resistance | 2.96 Ohms |
| Gain | 21.5 dB |
| Packaging | Reel |
| Output Power | 12 W |
| Maximum Operating Temperature | + 225 C |
| Product Type | RF MOSFET Transistors |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 105 V |