RF MOSFET Transistors RF LDMOS FET
Products specifications
| Vds - Drain-Source Breakdown Voltage | 105 V |
| Technology | Si |
| Product Type | RF MOSFET Transistors |
| Rds On - Drain-Source Resistance | 400 mOhms |
| Mounting Style | Screw Mount |
| Output Power | 50 W |
| Id - Continuous Drain Current | 50 mA |
| Transistor Polarity | N-Channel |
| Gain | 17 dB |
| Packaging | Reel |