PXAC261002FC-V1-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC261002FC-V1-R0

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Quantity

50+

Price

R 1,969.82

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Rds On - Drain-Source Resistance	300 mOhms
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Technology	Si
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Gain	15.1 dB
Output Power	100 W
Packaging	Reel

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Products specifications

Rds On - Drain-Source Resistance	300 mOhms
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Technology	Si
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Gain	15.1 dB
Output Power	100 W
Packaging	Reel