MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms
Products specifications
| Maximum Operating Temperature | + 175 C |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Technology | Si |
| Configuration | Single |
| Pd - Power Dissipation | 140 W |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 44 A |
| Vgs - Gate-Source Voltage | 20 V |
| Minimum Operating Temperature | - 55 C |
| Packaging | Cut Tape, MouseReel, Reel |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 8.5 mOhms |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |