MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms
Products specifications
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 429 A |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Packaging | Tube |
| Rds On - Drain-Source Resistance | 1 mOhms |
| Qualification | AEC-Q101 |
| Vds - Drain-Source Breakdown Voltage | 24 V |
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 180 nC |
| Pd - Power Dissipation | 300 W |
| Channel Mode | Enhancement |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |