MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
Lead Time: 365 Days
Products specifications
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 5.3 mOhms |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Minimum Operating Temperature | - 55 C |
| Channel Mode | Enhancement |
| Transistor Polarity | N-Channel |
| Packaging | Tube |
| Pd - Power Dissipation | 330 W |
| Mounting Style | Through Hole |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 169 A |
| Qg - Gate Charge | 170 nC |