MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
Products specifications
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Maximum Operating Temperature | + 175 C |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Technology | Si |
| Vgs - Gate-Source Voltage | 20 V |
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 320 A |
| Rds On - Drain-Source Resistance | 1.2 mOhms |
| Configuration | Single |
| Qualification | AEC-Q101 |
| Pd - Power Dissipation | 330 W |
| Qg - Gate Charge | 260 nC |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |