MOSFETs AUTO 30V 1 N-CH HEXFET 2.4mOhms
Products specifications
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 231 W |
| Qualification | AEC-Q101 |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 235 A |
| Packaging | Tube |
| Rds On - Drain-Source Resistance | 2.4 mOhms |
| Technology | Si |
| Qg - Gate Charge | 160 nC |
| Vgs - Gate-Source Voltage | 20 V |