MOSFETs 55V, 98A, 8mOhm Automotive MOSFET
Lead Time: 0 Days
Products specifications
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS | Details |
| Package/Case | TO-262-3 |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 110 A, 98 A |
| Rds On - Drain-Source Resistance | 6.5 mOhms, 8 mOhms |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 76 nC, 97.3 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 170 W, 150 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Height | 9.45 mm |
| Length | 10.2 mm |
| Transistor Type | 1 N-Channel |
| Type | HEXFET Power MOSFET |
| Width | 4.5 mm |
| Brand | Infineon / IR |
| Forward Transconductance - Min | 71 S |
| Fall Time | 67 ns |
| Product Type | MOSFET |
| Rise Time | 95 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 18 ns |
| Part # Aliases | SP001564660 |
| Unit Weight | 2.084 g |
| Qualification | AEC-Q101 |
| Transistor Polarity | N-Channel |
| Packaging | Tube |
| Mounting Style | Through Hole |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 55 V |