MOSFET AUTO -55V 1 P-CH HEXFET 20mOhms
Lead Time: 0 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | Through Hole |
| Transistor Polarity | P-Channel |
| Pd - Power Dissipation | 200 W |
| Qualification | AEC-Q101 |
| Id - Continuous Drain Current | 74 A |
| Qg - Gate Charge | 120 nC |
| Packaging | Tube |
| Technology | Si |
| Minimum Operating Temperature | - 55 C |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 20 mOhms |
| Configuration | Single |
| Channel Mode | Enhancement |