MOSFETs AUTO 30V 1 N-CH HEXFET 50mOhms
Lead Time: 0 Days
Products specifications
| Rds On - Drain-Source Resistance | 80 mOhms |
| Configuration | Dual |
| Vgs - Gate-Source Voltage | 20 V |
| Transistor Polarity | N-Channel, P-Channel |
| Qualification | AEC-Q101 |
| Id - Continuous Drain Current | 4 A |
| Packaging | Cut Tape, MouseReel, Reel |
| Number of Channels | 2 Channel |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Qg - Gate Charge | 16.7 nC |
| Pd - Power Dissipation | 1.4 W |