MOSFET AUTO 30V DUAL N P-CH HEXFET
Products specifications
| Technology | Si |
| Qualification | AEC-Q101 |
| Id - Continuous Drain Current | 6.5 A |
| Rds On - Drain-Source Resistance | 46 mOhms |
| Pd - Power Dissipation | 2 W |
| Packaging | Cut Tape, MouseReel, Reel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Qg - Gate Charge | 22 nC |
| Transistor Polarity | N-Channel, P-Channel |
| Number of Channels | 2 Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Configuration | Dual |