MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Minimum Operating Temperature | - 55 C |
| Configuration | Dual |
| Id - Continuous Drain Current | 3.4 A |
| Pd - Power Dissipation | 2 W |
| Qg - Gate Charge | 26 nC |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 105 mOhms |
| Transistor Polarity | P-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Maximum Operating Temperature | + 150 C |
| Number of Channels | 2 Channel |
| Technology | Si |
| Packaging | Cut Tape, MouseReel, Reel |