MOSFET AUTO 55V 1 N-CH HEXFET 3.8mOhms
Products specifications
| Vgs - Gate-Source Voltage | 20 V |
| Transistor Polarity | N-Channel, P-Channel |
| Qg - Gate Charge | 24 nC |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Rds On - Drain-Source Resistance | 65 mOhms |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Packaging | Cut Tape, MouseReel, Reel |
| Pd - Power Dissipation | 2 W |
| Id - Continuous Drain Current | 4.7 A |
| Technology | Si |
| Qualification | AEC-Q101 |